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Freescale Semiconductor Technical Data
Document Number: MHV5IC2215N Rev. 1, 5/2006
RF LDMOS Wideband Integrated Power Amplifier
The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale's High Voltage (28 Volts) LDMOS IC technology and integrates a two - stage structure. Its wideband on - chip matching design makes it usable from 1500 to 2200 MHz. The linearity performances cover all modulation formats for cellular applications. Driver Application * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (1930 1990 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 27.5 dB ACPR @ 885 kHz Offset -- - 60 dBc in 30 kHz Bandwidth * Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (2130 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 24 dB ACPR @ 5 MHz Offset -- - 55 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters Features * On - Chip Matching (50 Ohm Input, >5 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
MHV5IC2215NR2
2170 MHz, 23 dBm, 28 V SINGLE N - CDMA, SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
16 1
CASE 978 - 03 PFP - 16
VRD1 VRG1 VDS1 2 Stage IC VDS2/RFout
N.C. VRD1 VRG1 VDS1 GND RFin VGS1 VGS2
1 2 3 4 5 6 7 8 (Top View)
16 15 14 13 12 11 10 9
N.C. VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout N.C.
RFin
VGS1 VGS2
Quiescent Current Temperature Compensation
Note: Exposed backside flag is source terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHV5IC2215NR2 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +12 - 65 to +150 150 12 Unit Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = 23 dBm CW) Stage 1, 28 Vdc, IDQ1 = 164 mA Stage 2, 28 Vdc, IDQ2 = 115 mA Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Symbol RJC 9.3 3.5 Value (1) Unit C/W
Table 3. ESD Protection Characteristics
Class 0 (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit W - CDMA Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, f = 2140 MHz, Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gain Flatness in 60 MHz Bandwidth @ Pout = 23 dBm f = 2110- 2170 MHz Adjacent Channel Power Ratio Input Return Loss Gps GF ACPR IRL 23 -- -- -- 24 0.3 - 56 - 12 27 0.5 - 54 - 10 dB dB dBc dB
Typical N - CDMA Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, f = 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gain Flatness @ Pout = 23 dBm Adjacent Channel Power Ratio Input Return Loss Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 23 dBm Delay @ Pout = 23 dBm Including Output Matching f = 1930 - 1990 MHz Gps GF ACPR IRL Delay 25.5 -- -- -- -- -- 27.5 0.3 - 60 - 12 0.2 1.5 29 -- -- -- -- -- dB dB dBc dB ns
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
MHV5IC2215NR2 2 RF Device Data Freescale Semiconductor
W - CDMA DRIVER APPLICATION
1 VRD1 VRG1 Z12 VDS1 + C5 + 4 C4 5 Z1 C1 VGS1 R1 VGS2 R2 C3 C2 8 7 Z2 Z3 Z4 6 2 3
NC
NC
16 Z13 15 C8 14 13 Z5 12 C11 11 10 C9 Z6 C10 Z7 Z8 Z9 Z10 Z11 + C7 + VDS2 C6
RF OUTPUT
RF INPUT
Quiescent Current Temperature Compensation NC 9
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.045 x 0.1289 Microstrip 0.0443 x 0.0161 Microstrip 0.0308 x 0.0416 x 0.03 Taper 0.0161 x 0.0685 Microstrip 0.0838 x 0.1759 Microstrip 0.0503 x 0.1759 Microstrip 0.0922 x 0.1759 Microstrip
Z8 Z9 Z10 Z11 Z12 Z13 PCB
0.0105 x 0.1200 Microstrip 0.0559 x 0.1145 Microstrip 0.045 x 0.2671 Microstrip 0.0349 x 0.3319 Microstrip 0.0027 x 2.0413 Microstrip 0.0349 x 0.9151 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 3. MHV5IC2215NR2 Test Circuit Schematic
Table 6. MHV5IC2215NR2 Test Circuit Component Designations and Values
Part C1 C2, C3 C4, C7 C5, C6 C8 C9, C10 C11 R1, R2 Description 22 pF, 50 V Chip Capacitor (0603) 6.8 pF, 50 V Chip Capacitors (0603) 1 F, 35 V Tantalum Chip Capacitors 330 F, 50 V Electrolytic Chip Capacitors 0.01 F, 50 V Chip Capacitor (0805) 2.7 pF, 50 V Chip Capacitors (0603) 15 pF, 25 V Chip Capacitor (0603) 1 kW Chip Resistors Part Number 06033J220GBT 06035J6R8BBT TAJA105K035R MCR35V337M10X16 0805C103K5RACTR 06035J2R7BBT 06033J150GBT P1.00KCCT- ND Manufacturer AVX AVX Kemet Multicomp Vishay AVX AVX Panasonic
MHV5IC2215NR2 RF Device Data Freescale Semiconductor 3
W - CDMA DRIVER APPLICATION
C5
C6
C4 VD1 VD2
C7
C8
C1 C9 C10 C2 C11
C3
R2 VG2 R1 VG1 MHV5IC2215, Rev. 1
Figure 4. MHV5IC2215NR2 Test Circuit Component Layout
MHV5IC2215NR2 4 RF Device Data Freescale Semiconductor
TYPICAL W - CDMA DRIVER APPLICATION CHARACTERISTICS
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB)
33 30 27 24 21 18 15 12 9 6 3 0 0.1 IM3 PAE 1 Pout, OUTPUT POWER (WATTS) AVG. 10 VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA f1 = 2135 MHz, f2 = 2145 MHz, 2 x W-CDMA 10 MHz in 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps
0 -6 -12 -24 -30 -36 ACPR -42 -48 -54 -60 -66 IM3 (dBc), ACPR (dBc) -18
Figure 5. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power
50
28 TC = -30_C 26 Gps, POWER GAIN (dB) Gps 25_C 24 85_C 22 PAE VDD = 28 Vdc IDQ1 = 164 mA IDQ2 = 115 mA f = 2140 MHz 1 10 -30_C
26 PAE, POWER ADDED EFFICIENCY (%) 25 Gps, POWER GAIN (dB) 24 23 22 21 20 VDD = 12 V 19 0 2 4 6 8 10 12 14 Pout, OUTPUT POWER (WATTS) CW 20 V 16 V 32 V 24 V 28 V IDQ1 = 164 mA IDQ2 = 115 mA f = 2140 MHz
40 25_C 85_C 30
20
20
10 0 100
18 0.1
Pout, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain and Power Added Efficiency versus Output Power
28 21 14 S21 (dB) 7 0 -7 S11 -14 VDD = 28 Vdc, Pout = 23 dBm CW IDQ1 = 164 mA, IDQ2 = 115 mA 1500 2000 f, FREQUENCY (MHz) 2500 -14 -16 3000 S21 -2 -4 -6 S11 (dB) -8 -10 -12 Gps, POWER GAIN (dB) 30 28 26 24
Figure 7. Power Gain versus Output Power
TC = -30_C
25_C
85_C 22 20 VDD = 28 Vdc, Pout = 23 dBm CW IDQ1 = 164 mA, IDQ2 = 115 mA Two-Tone Measurements, Center Frequency = 2140 MHz 1950 2000 2050 2100 2150 2200 2250 2300
-21 1000
18 1900
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
Figure 9. Power Gain versus Frequency MHV5IC2215NR2
RF Device Data Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
1.E+07 MTTF FACTOR (HOURS X AMPS2)
2nd Stage 1.E+06 1st Stage
1.E+05
1.E+04 90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 10. MTTF Factor versus Junction Temperature
MHV5IC2215NR2 6 RF Device Data Freescale Semiconductor
f = 2170 MHz Zload f = 2110 MHz Zin
f = 2170 MHz
f = 2110 MHz
Zo = 50
VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm f MHz 2110 2140 2170 Zin Zin 35.1 - j5.4 34.1 - j1.8 33.8 - j1.7 Zload 1.03 - j0.87 0.99 - j0.61 0.94 - j0.35
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 11. Series Equivalent Input and Load Impedance, 2140 MHz
MHV5IC2215NR2 RF Device Data Freescale Semiconductor 7
N - CDMA DRIVER APPLICATION
1 VRD1 VRG1 Z10 VDS1 + C5 + 4 C4 5 Z1 C1 VGS1 R1 VGS2 R2 C3 C2 8 7 Z2 Z3 Z4 6 2 3
NC
NC
16 Z11 15 C8 14 13 Z5 12 C11 11 10 C9 C12 C10 Z6 Z7 Z8 Z9 + C7 + VDS2 C6
RF OUTPUT
RF INPUT
Quiescent Current Temperature Compensation NC 9
Z1 Z2 Z3 Z4 Z5 Z6
0.045 x 0.1289 Microstrip 0.0443 x 0.0161 Microstrip 0.0308 x 0.0416 x 0.03 Taper 0.0161 x 0.0685 Microstrip 0.1757 x 0.2269 Microstrip 0.1220 x 0.1530 Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.1140 x 0.0550 Microstrip 0.045 x 0.2671 Microstrip 0.0349 x 0.3319 Microstrip 0.0027 x 2.0413 Microstrip 0.0349 x 0.9151 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 12. MHV5IC2215NR2 Test Circuit Schematic
Table 7. MHV5IC2215NR2 Test Circuit Component Designations and Values
Part C1 C2, C3 C4, C7 C5, C6 C8 C9, C10 C11 C12 R1, R2 Description 22 pF, 25 V Chip Capacitor (0603) 6.8 pF, 50 V Chip Capacitors (0603) 1 F, 35 V Tantalum Chip Capacitors 330 F, 50 V Electrolytic Chip Capacitors 0.01 F, 50 V Chip Capacitor (0805) 2.4 pF, 50 V Chip Capacitors (0603) 15 pF, 25 V Chip Capacitor (0603) 1.5 pF, 50 V Chip Capacitor (0603) 1 kW Chip Resistors Part Number 06033J220GBT 06035J6R8BBT TAJA105K035R MCR35V337M10X16 0805C103K5RACTR 06035J2R4BBT 06033J150GBT 06035J1R5BBT P1.00KCCT- ND Manufacturer AVX AVX Kemet Multicomp Vishay AVX AVX AVX Panasonic
MHV5IC2215NR2 8 RF Device Data Freescale Semiconductor
N - CDMA DRIVER APPLICATION
C5
C6
C4 VD1 VD2
C7
C8
C1 C9 C10 C2
C12 C11
C3
R2 VG2 R1 VG1 MHV5IC2215, Rev. 1
Figure 13. MHV5IC2215NR2 Test Circuit Component Layout
MHV5IC2215NR2 RF Device Data Freescale Semiconductor 9
TYPICAL N - CDMA DRIVER APPLICATION CHARACTERISTICS
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB)
44 VDD = 28 Vdc, IDQ1 = 145 mA, IDQ2 = 105 mA, f1 = 1955 MHz 40 f2 = 1965 MHz, 2 x N-CDMA, 2.5 MHz Carrier Spacing 36 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 32 0.01% Probability (CCDF) 28 24 20 16 12 8 4 0 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10 IM3 PAE ACPR Gps
0 -6 -12 -24 -30 -36 -42 -48 -54 -60 -66 IM3 (dBc), ACPR (dBc) -18
Figure 14. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power
50 32 PAE, POWER ADDED EFFICIENCY (%) 24 16 S21 (dB) 8 0 VDD = 28 Vdc Pout = 23 dBm CW IDQ1 = 145 mA IDQ2 = 105 mA 1500 2000 f, FREQUENCY (MHz) S21 -2 -4 -6 S11 (dB) -8 -10 -12 S11 -14 -16 3000
31 Gps 30 Gps, POWER GAIN (dB)
40
29
30
28 VDD = 28 Vdc IDQ1 = 145 mA IDQ2 = 105 mA f = 1960 MHz 10
20
-8 -16
27
PAE
10
26 0.1
1
0 100
-24 1000
2500
Pout, OUTPUT POWER (WATTS) CW
Figure 15. Power Gain and Power Added Efficiency versus Output Power
Figure 16. Broadband Frequency Response
MHV5IC2215NR2 10 RF Device Data Freescale Semiconductor
f = 1930 MHz Zload f = 1990 MHz f = 1930 MHz f = 1990 MHz Zo = 50 Zin
VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm f MHz 1930 1960 1990 Zin Zin 62.3 - j19.4 54.1 - j20.7 47.4 - j19.3 Zload 2.18 - j0.88 2.15 - j1.18 2.12 - j1.49
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance, 1960 MHz
MHV5IC2215NR2 RF Device Data Freescale Semiconductor 11
Table 8. Common Source Scattering Parameters (VDC = 28 V, TC = 25_C, 50 ohm system) IDQ1 = 164 mA, IDQ2 = 115 mA
f MHz 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 |S11| 0.68244 0.60173 0.47213 0.39882 0.35107 0.23689 0.21492 0.30222 0.46271 0.60247 0.69273 21.958 - 30.075 - 92.332 175.345 59.2 - 70.587 162.587 113.328 74.437 39.529 8.867 |S21| 3.27363 10.23125 13.7957 13.86577 16.61251 17.30592 17.05916 6.44934 1.40717 0.39763 0.10191 S21 - 46.706 - 119.333 123.921 44.495 - 38.246 - 133.04 121.911 - 14.639 - 89.824 - 141.044 - 174.046 |S12| 0.00073 0.00072 0.0007 0.00088 0.00141 0.0018 0.00324 0.00275 0.00149 0.00109 0.00129 S12 9.794 13.436 - 2.999 - 45.669 - 13.097 - 35.967 - 62.618 - 134.469 - 169.397 167.909 122.208 |S22| 0.98732 1.00029 0.94139 0.93605 0.91624 0.88891 0.56059 0.69074 0.92384 0.958 0.9351 S22 153.093 126.919 106.192 87.096 65.161 37.263 - 24.504 84.748 34.554 6.133 - 18.125
IDQ1 = 164 mA, IDQ2 = 345 mA
f MHz 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 |S11| 0.67537 0.59017 0.46708 0.39635 0.32171 0.2053 0.20173 0.29085 0.46015 0.60229 0.69238 S11 |S11| 0.6711 0.58525 0.46378 0.39336 0.31114 0.19301 0.19638 0.28869 0.45971 0.60251 0.69282 21.546 - 30.018 - 92.504 174.232 55.471 - 78.069 152.604 111.542 73.791 39.001 8.463 |S21| 5.75013 16.76169 19.69001 20.76629 24.51619 25.16732 23.41998 9.01024 2.10623 0.60593 0.15674 21.709 - 29.975 - 92.31 174.623 55.947 - 76.58 154.548 112.112 74.095 39.22 8.662 |S21| 5.31667 15.91709 19.32081 20.10313 23.76068 24.4731 23.13058 8.78893 2.0309 0.58259 0.15083 S21 - 53.329 - 134.625 116.925 39.298 - 44.522 - 138.656 115.327 - 12.58 - 88.735 - 141.146 - 174.755 |S12| 0.0007 0.00077 0.00076 0.0009 0.00124 0.00189 0.00305 0.00259 0.00142 0.00107 0.00121 S21 - 50.942 - 129.84 119.077 41.013 - 42.642 - 136.766 117.16 - 12.308 - 88.099 - 140.332 - 173.655 |S12| 0.0008 0.00067 0.00075 0.00083 0.00135 0.0017 0.00282 0.00276 0.00145 0.00109 0.00114 S12 24.45 - 1.375 5.296 - 40.621 - 10.794 - 36.619 - 62.675 - 134.95 - 166.566 168.738 124.35 |S22| 0.99347 0.9925 0.91107 0.90699 0.88668 0.85513 0.46723 0.64185 0.90861 0.95346 0.93359 S12 6.129 - 0.12 - 10.343 - 45.427 - 6.07 - 34.308 - 62.743 - 133.95 - 172.129 165.352 127.091 |S22| 0.99279 0.99768 0.91612 0.91179 0.89001 0.86052 0.47971 0.65353 0.91226 0.95453 0.93394 S22 152.201 124.548 105.394 87.053 65.947 38.413 - 15.877 79.222 34.114 6.03 - 18.226 S22 152.416 124.892 105.353 87.084 65.729 38.165 - 18.382 80.165 34.199 6.049 - 18.148
IDQ1 = 164 mA, IDQ2 = 500 mA
f MHz 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
MHV5IC2215NR2 12 RF Device Data Freescale Semiconductor
NOTES
MHV5IC2215NR2 RF Device Data Freescale Semiconductor 13
NOTES
MHV5IC2215NR2 14 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _ A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
14 x e
D e/2
D1
8
9
E1
8X
B
BOTTOM VIEW
E CB
S
bbb Y A A2
M
b1 c
C
DATUM PLANE SEATING PLANE
H
SECT W - W
L1
ccc C
q
W W L 1.000 0.039 DETAIL Y A1
GAUGE PLANE
CASE 978 - 03 ISSUE C PFP - 16
RF Device Data Freescale Semiconductor
CCC EE CCC EE
b aaa
M
c1
CA
S
DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc
MHV5IC2215NR2 15
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MHV5IC2215NR2
Rev. 16 1, 5/2006 Document Number: MHV5IC2215N
RF Device Data Freescale Semiconductor

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